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| Silicon Variable Capacitance Diode BB 639 q For tuning of extended frequency bands in VHF TV/VTR tuners Type Ordering Code (tape and reel) Q62702-B586 Pin Configuration 1 2 C A Marking Package BB 639 yellow S SOD-323 Maximum Ratings Parameter Reverse voltage Reverse voltage (R 5 k) Forward current Operating temperature range Storage temperature range Thermal Resistance Junction-ambient Symbol Values 30 35 20 - 55 ... + 150 - 55 ... + 150 Unit V V mA C C VR VRM IF Top Tstg RthJA 450 K/W Semiconductor Group 1 10.94 BB 639 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 C Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, 28 V, f = 1 MHz Capacitance matching VR = 1 V ... 28 V, f = 1 MHz Series resistance CT = 12 pF, f = 100 MHz Series inductance Value typ. max. Unit IR - - - - 38.3 2.6 14.7 - 0.65 2 10 200 nA CT 36 2.4 42 2.9 pF CT1/CT28 13.5 CT/CT - 2.5 - - % - - - nH - rS LS Semiconductor Group 2 BB 639 Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 |
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